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<110> Oriented Silicon Ingot

<110> Oriented Silicon Ingot

Ingots are grown on crystals that have a regular crystal structures. When they are sliced from the crystal, the surface is aligned in one of several relative directions, known as the orientation. This is also referred to as the growth plane of the crystalline silicon. The orientation is...

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Product Details

Orientation

<1-1-0>

Type

P/N

Growth Method

Cz

Diameter(mm)

100/125/150/200/300/400

Resistivity(ohm-cm)

0.0006~200


Ingots are grown on crystals that have a regular crystal structures. When they are sliced from the crystal, the surface is aligned in one of several relative directions, known as the orientation. This is also referred to as the growth plane of the crystalline silicon. The orientation is important for the electronic properties of the wafer. Ion implantation depths depend on the orientation and it will affect the paths for transport. The different planes have different arrangements of atoms and lattices so it will affect the way the electricity travels in the circuit. The orientations of silicon wafers are classified using Miller indices. These indices include such descriptions as (100), (111), and (110).

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