<111> Oriented Silicon Ingot

<111> Oriented Silicon Ingot

High-purity, semiconductor-grade silicon (only a few parts per million of impurities) is melted in a crucible at 1425 degrees Celsius, usually made of quartz. Dopant impurity atoms such as boronor phosphorus can be added to the molten silicon in precise amounts to dope the silicon, thus changing...

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Product Details

Orientation

<1-1-1>

Type

P/N

Growth Method

Cz

Diameter(mm)

100/125/150/200/300/400

Resistivity(ohm-cm)

0.0006~200


High-purity, semiconductor-grade silicon (only a few parts per million of impurities) is melted in a crucible at 1425 degrees Celsius, usually made of quartz. Dopant impurity atoms such as boronor phosphorus can be added to the molten silicon in precise amounts to dope the silicon, thus changing it into p-type or n-type silicon, with different electronic properties. A precisely oriented rod-mounted seed crystal is dipped into the molten silicon. The seed crystal's rod is slowly pulled upwards and rotated simultaneously. By precisely controlling the temperature gradients, rate of pulling and speed of rotation, it is possible to extract a large, single-crystal, cylindrical ingot from the melt.

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