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Ultra-high Doped Monocrystalline Silicon Ingot

Ultra-high Doped Monocrystalline Silicon Ingot

We have ultra-high arsenic doping monocrystalline silicon ingot. Once the ingot is fully-grown, it is ground to a rough size diameter a little larger than the desired diameter of the finished silicon wafer. The ingot is then given a notch or flat to indicate its orientation, depending on the...

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We have ultra-high arsenic doping monocrystalline silicon ingot. Once the ingot is fully-grown, it is ground to a rough size diameter a little larger than the desired diameter of the finished silicon wafer. The ingot is then given a notch or flat to indicate its orientation, depending on the wafer diameter, customer specifications, or SEMI Standards. Once it has passed a number of inspections, the ingot is sliced into wafers.


Type

Dopant

Diameter
(mm)

Resistivity Range
  (ohm.cm)

N

Arsenic

100/125/150/200/300/400

0.0020~0.01

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