Semi-grade Monocrystalline Silicon Ingot

Semi-grade Monocrystalline Silicon Ingot

Growing a silicon ingot can take anywhere from a week to an entire month depending on many factors including size, quality and specifications. More than 75% of all single crystal silicon wafers grow via the Czochralski (CZ) method which uses chunks of virgin polycrystalline silicon. These chunks are melted down and placed in a quartz crucible along with small quantities of elements called dopants, the most common of which are boron, phosphorus, arsenic and antimony. The added dopants give the desired electrical properties for the grown ingot and depending on which dopant is used, the ingot becomes a P or N type ingot (boron: P type; phosphorus, antimony, arsenic: N type). We can currently produce 76mm and 300mm silicon ingot, as well as custom diameters between 50mm and 400mm.

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Product Details



TypeDopantDiameter(mm)Resistivity Range(ohm.cm)
PBoron100/125/150/200/300/4000.0006~200
NPhosphorus100/125/150/200/300/4000.0011~60
NArsenic100/125/150/200/300/4000.0020~0.01
NAntimony100/125/150/200/300/4000.0088~0.03


We use the Czochralski (CZ) method to grow both p-type and n-type dislocation-free silicon ingots with <100>, <111> or <110> orientation. The diameters of the ingots are 100mm, 125mm, 150mm, 200mm, 300mm and 400mm. The dopant types used, and the matching resistivity ranges for each dopant are listed in the product tables. For the p-type boron doped ingots, the lowest resistivity that can be obtained for an ingot is 0.0006 ohm.cm. For an n-type ingot, the lowest resistivity that can be obtained by doping with red-phosphorus is 0.0011 ohm.cm. To ensure high gettering ability and mechanical strength, the oxygen contents of the ingots are regulated. We also pay special attention to improve radial uniformity and to minimize the as-grown defects, such as COP, swirl and dislocation loops in an ingot.

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