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Silicon Crystal Growth Furnace 1050

Silicon Crystal Growth Furnace 1050

Silicon crystal growth furnace is to melt silicon semiconductor materials by graphite resistance heater in an inert gas environment, using czochralski technique dislocation-free crystal growth equipment, it can produce high quality single crystal. Here are the parameters of silicon crystal...

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Silicon crystal growth furnace is to melt silicon semiconductor materials by graphite resistance heater in an inert gas environment, using czochralski technique dislocation-free crystal growth equipment, it can produce high quality single crystal. Here are the parameters of silicon crystal growth furnace 1050.


Heat field

24 inch、26 inch

single crystal size

8 inch - 12 inch


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