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Simulation of thermal field design of silicon crystal growth furnace
- Mar 12, 2018 -

In the process of direct-pulling growth of monocrystalline silicon, the success of silicon single crystal growth and quality is determined by the temperature distribution of the thermal field. Temperature distribution of the appropriate thermal field, not only silicon single crystal growth smooth, but also high quality; if the temperature distribution of the thermal field is not very reasonable, the growth of silicon crystals in the process of easy to produce a variety of defects, affecting the quality of the situation, the occurrence of a serious phenomenon of the crystallization of crystal growth Therefore, in the investment of silicon growth enterprises in the early stage, must be based on the growth equipment, configuration of the most reasonable thermal field, so as to ensure the production of silicon crystal quality. In direct-pulling silicon single crystal growth process, temperature gradient is generally used to describe the temperature distribution of thermal field, in which the temperature gradient at the solid-liquid interface is the most important.

The numerical simulation is to support real (and expensive) experiments at a low cost, using computer computing to provide detailed information. Since numerical simulations provide an approximate real-world process, it is easy to make easy judgments about the effects of any type of change (geometrical size, insulation material, heater, peripheral environment, etc.) on the crystal quality. Numerical simulations are used to obtain inexpensive, complete and comprehensive details of the crystallization process, which are used to predict crystal growth and improve crystal growth techniques. For example, for inexperienced people, you can visualize the historical point defects and thermal stress details of the melt flow. Therefore, numerical simulation is one of the best ways to achieve higher productivity and better meet market demand for crystal diameters and quality.

Taking the representative software Cgsim of numerical simulation simulation as an example, the temperature field, flow field, crystal thermal stress, temperature distribution and solid-liquid interface of crystal growth can be analyzed, so as to optimize the crystal growth process. It includes the following basic tools: Cgsim two-dimensional module, defect module, dynamic direct-pull module, three-dimensional fluid module. Visually observe the simulation results using the view 2d and Cgsim Viewer software tools.